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| SDB20S30_07 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode Switching behavior benchmark No reverse recovery | |||
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Silicon Carbide Schottky Diode
⢠Revolutionary semiconductor
material - Silicon Carbide
⢠Switching behavior benchmark
⢠No reverse recovery
⢠No temperature influence on
the switching behavior
⢠No forward recovery
SDB20S30
thinQ!Â¥ SiC Schottky Diode
1 23
Product Summary
VRRM
300 V
Qc
23 nC
IF
2x10 A
D2PAK
Type
SDB20S30
Package
D2PAK
Ordering Code
Q67040-S4374
Marking
D20S30
Maximum Ratings, at Tj = 25 °C, unless otherwise specified (per leg)
Parameter
Symbol
Value
Continuous forward current, TC=100°C
IF
10
RMS forward current, f=50Hz
IFRMS
14
Surge non repetitive forward current, sine halfwave IFSM
36
TC=25°C, tp=10ms
Repetitive peak forward current
IFRM
45
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
IFMAX
100
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
³i2dt
6.5
VRRM
300
Surge peak reverse voltage
VRSM
300
Power dissipation, single diode mode, TC=25°C Ptot
65
Operating and storage temperature
Tj , Tstg
-55... +175
Unit
A
A²s
V
W
°C
Rev. 1.2
Page 1
2007-03-27
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