PXAC261212FC Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

Typical Performance (cont.)
Two-carrier 3GPP WCDMA
V_DD = 28 V, I_DQ = 280 mA,
V_GS = 2.62 V, ƒ = 2575 MHz
10 MHz carrier spacing, 8 dB PAR,
3.84 MHz bandwidth
0
60
-20
40
-40
-60
29
IMD Low
20
IMD Up
ACPR
Efficiency
c261212fc-gr2a
0
33 37 41 45 49 53
Output Power (dBm)
CW Performance
V_DD = 28 V, I_DQ = 280 mA
20
60
Efficiency
50
15 ^Gain
40
30
10
5
29
20
2575 MHz
2635 MHz
10
2605 MHz
c261212fc-gr4
0
33 37 41 45 49 53
Output Power (dBm)
PXAC261212FC
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 280 mA, V_GS = 2.62V,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-10
-20
-30
-40
-50
29
2575 IMDL
2605 IMDL
2635 IMDL
2575 IMDU
2605 IMDU
2635 IMDU
c261212fc-gr3
33 37 41 45 49 53
Output Power (dBm)
CW Performance
at various V_DD
I_DQ = 280 mA, ƒ = 2635 MHz
22.5
70
Efficiency
20.0
60
17.5
50
Gain
15.0
40
12.5
30
10.0
7.5
V_DD = 24 V
20
V_DD = 28 V
10
V_DD = 32 V
5.0
c261212fc-gr5c
0
29 33 37 41 45 49 53
Output Power (dBm)
Data Sheet
4 of 10
Rev. 02.1, 2014-06-30