PXAC261212FC Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXAC261212FC
Thermally-Enhanced High Power RF LDMOS FET
120 W, 28 V, 2496 – 2690 MHz
Description
The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric
designed for use in multi-standard cellular power amplifier applications
in the 2496 to 2690 MHz frequency band. It features dual-path design,
input and output matching, and a thermally-enhanced package with
earless flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PXAC261212FC
Package H-37248-4
Two-carrier 3GPP WCDMA
V_DD = 28 V, I_DQ = 280 mA,
V_GS = 2.62 V, ƒ = 2635 MHz
10 MHz carrier spacing, 8 dB PAR
3.84 MHz bandwidth
17
60
Efficiency
16
50
15
40
14 _Gain
30
13
20
12
10
11
29
c261212fc-gr1c
0
33 37 41 45 49 53
Output Power (dBm)
Features
• Broadband internal matching
• Asymmetric design
- Main P_1dB = 50 W
- Peak P_1dB = 75 W
• CW performance in Doherty configuration,
2635 MHz, 28 V
- Output power at P_1dB = 107 W
- Gain = 14.4 dB
- Efficiency = 57%
• Integrated ESD protection: Human Body Model,
class 1C (per JESD22-A114)
• Capable of handling 10:1 VSWR @28 V, 120 W
(CW) output power
• Low thermal resistance
• Pb-free and RoHS-compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
V_DD = 28 V, V_GS(peak) = 1.3 V, I_DQ = 280 mA, P_OUT = 28 W average, ƒ₁ = 2630 MHz, ƒ₂ = 2640 MHz. 3GPP WCDMA signal:
3.84 MHz bandwidth, 8 dB PAR @0.01% CCDF.
Characteristic
Symbol Min Typ
Max
Unit
Linear Gain
Drain Efficiency
G_ps
14.2 15.0
—
dB
_D
45
48
—
%
Intermodulation Distortion
IMD
—
–25
–22
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2014-06-30