PXAC261212FC Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXAC261212FC
Typical Performance (data taken in Infineon Doherty reference test fixture)
Two-carrier 3GPP WCDMA
V_DD = 28 V, I_DQ = 280 mA,
V_GS = 2.62 V, ƒ = 2605 MHz
10 MHz carrier spacing, 8 dB PAR
3.84 MHz bandwidth
17
60
Efficiency
16
50
15
40
14 ^Gain
30
13
20
12
10
11
29
c261212fc-gr1b
0
33 37 41 45 49 53
Output Power (dBm)
Two-carrier 3GPP WCDMA
V_DD = 28 V, I_DQ = 280 mA,
V_GS = 2.62 V, ƒ = 2575 MHz
10 MHz carrier spacing, 8 dB PAR
3.84 MHz bandwidth
17
60
Efficiency
16
50
15
40
14 Gain
30
13
20
12
10
11
29
c261212fc-gr1a
0
33 37 41 45 49 53
Output Power (dBm)
Two-carrier 3GPP WCDMA
V_DD = 28 V, I_DQ = 280 mA,
V_GS = 2.62 V, ƒ = 2635 MHz
10 MHz carrier spacing, 8 dB PAR,
3.84 MHz bandwidth
0
60
-20
40
-40
-60
29
IMD Low
20
IMD Up
ACPR
Efficiency
c261212fc-gr2c
0
33 37 41 45 49 53
Output Power (dBm)
Two-carrier 3GPP WCDMA
V_DD = 28 V, I_DQ = 280 mA,
V_GS = 2.62 V, ƒ = 2605 MHz
10 MHz carrier spacing, 8 dB PAR,
3.84 MHz bandwidth
0
60
-20
40
-40
-60
29
IMD Low
20
IMD Up
ACPR
Efficiency
c261212fc-gr2b
0
33 37 41 45 49 53
Output Power (dBm)
Data Sheet
3 of 10
Rev. 02.1, 2014-06-30