PTFB182503EL Datasheet, PDF (4/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
PTFB182503EL
PTFB182503FL
Power Sweep, CW Conditions
V_DD = 30 V, I_DQ = 1850 mA, ƒ = 1842 MHz
Voltage Sweep
I_DQ = 1850 mA, ƒ = 1842 MHz, tone spacing =
1 MHz, Output Power (PEP) = 53 dBm
19
Gain
18
65
-10
55
-20
Efficiency
17
Efficiency
16
45
-30
35
IM3 Up
-40
15
T_CASE = 25°C
25
T_CASE = 90°C
Gain
14
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0
40 80 120 160 200 240
23
25
27
29
31
Output Power (W)
b182503-v1efl-^Sv^upp1^{ly Voltage (V)}
Nornalized to 50 Ohms
Broadband Circuit Impedance
Z Source
D
Z Load
50
40
30
20
10
33
Z₀ = 50 Ω
G
S
Frequency
MHz
1780
1800
1820
1840
1860
1880
1900
1920
Data Sheet
Z Source W
R
jX
2.99
–2.48
2.95
–2.30
2.89
–2.13
2.84
–1.96
2.80
–1.76
2.78
–1.58
2.74
–1.39
2.72
–1.21
Z Load W
R
jX
1.33
–0.49
1.33
–0.38
1.31
–0.27
1.29
–0.16
1.29
–0.02
1.28
0.10
1.29
0.23
1.29
0.36
4 of 12
Z Load
1920 MHz
1780 MHz
0.1
Z Source
0. ²
0.3 Rev. 06, 2010-11-09
0.4