PTFB182503EL Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz

Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
PTFB182503EL
PTFB182503FL
Two-Carrier WCDMA at Various Biases
V_DD = 30 V, ƒ = 1842 MHz, 3GPP WCDMA
signal, PAR = 7.5 dB, 5 MHz carrier spacing
-30
-35
I_DQ = 1.65 A
I_DQ = 1.45 A
-40
I_DQ = 2.25 A
-45
-50
-55
38
I_DQ = 2.05 A
I_DQ = 1.85 A
40 42 44 46 48 50
Average Output Power (dBm)
Six-Carrier GSM vs Power Out
V_DD = 30V, I_DQ =1.85 A ƒ = 1842 MHz,
PAR = 7.1 dB
-5
-10
-15
-20
-25
-30
-35
-40
-45
37
IM3 Up
IM3 Low
Efficiency
Efficiency
39 41 43 45 47 49
Output Power (dBm)
45
40
35
30
25
20
15
10
5
51
CW Performance
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.85 A, ƒ = 1842 MHz
20
19
18
17
16
15
14
13
35
Gain
Efficiency
40
45
50
Output Power (dBm)
70
60
50
40
30
20
10
0
55
Power Sweep
V_DD = 30 V, ƒ = 1842 MHz
20.0
19.5
19.0
18.5
1.45 A
18.0
17.5
1.65 A
1.85 A
2.05 A
17.0
2.25 A
36 38 40 42 44 46 48 50 52 54
Output Power (dBm)
Data Sheet
3 of 12
Rev. 06, 2010-11-09