PTFB182503EL Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz

Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1805 – 1880 MHz
Description
The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 1805 to 1880 MHz frequency band. Features include input
and output matching, high gain, wide signal bandwidth and reduced
memory effects for improved DPD correctability. Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
PTFB182503EL
H-33288-6
PTFB182503FL
H-34288-4/2
PTFB182503EL
PTFB182503FL
Two-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 1.85 A, ƒ = 1842 MHz, 3GPP
WCDMA signal, PAR = 7.5 dB,
10 MHz carrier spacing
-30
35
-35
30
Efficiency
25
-40
IM3
-45
-50
20
15
ACPR
10
-55
38
40
42
44
46
48
Average Output Power (dBm)
5
50
Features
• Broadband internal input and output matching
• Enhanced for use in DPD error correction systems
• Typical two-carrier WCDMA performance,
1880 MHz, 30 V
- Average output power = 50 W
- Linear gain = 19 dB
- Drain efficiency = 28 %
- Intermodulation distortion = –35 dBc
• Typical CW performance, 1880 MHz, 30 V
- Output power at P_1dB = 240 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty peaking amplifiers
• Integrated ESD protection. Human Body Model,
Class 2 (minimum)
• Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
• Pb-free, RoHS-compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 1.85 A, P_OUT = 50 W average
ƒ₁ = 1840 MHz, ƒ₂ = 1845 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
18
19
hD
27
28
IMD
—
–35
Max
—
—
–31
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 12
Rev. 06, 2010-11-09