PTFB091802FC_16 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 – 960 MHz

PTFB091802FC
Typical Performance (cont.)
CW Performance Small Signal
Gain & Input Return Loss
V_DD = 28 V, I_DQ = 1400 mA
20
0
18
Gain
-5
16
-10
IRL
14
-15
12
750
800
850
900
-20 ptfb091802fc_g6
950 1000 1050 1100
Frequency (MHz)
Load Pull Performance
Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, I_DQ = 1400 mA
P_1dB
Max Output Power
Max Drain Efficiency
Freq
Zs
[MHz]
[W]
Zl
Gain P_OUT P_OUT
h_D
[W]
[dB] [dBm] [W]
[%]
Zl
Gain P_OUT P_OUT
h_D
[W]
[dB] [dBm] [W]
[%]
920 3.48 – j4.93 1.95 – j1.75
17.2
51.1
127
55.1
4.47 – j0.46
20.2 48.9
77
71.0
942 4.17 – j5.32 1.93 – j1.59
18.3
50.4
110
56.0
4.77 + j0.06
20.8 47.8
60
66.4
960 4.61 – j5.47 1.86 – j1.64
18.3
50.4
109
56.2
4.23 – j0.33
20.6 48.2
65
66.9
Data Sheet
4 of 9
Rev. 02.1, 2016-06-10