PTFB091802FC_16 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 – 960 MHz

PTFB091802FC
Typical Performance (data taken in a production test fixture)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1400 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
-10
60
ACPU
-20
ACPL
Efficiecy
50
-30
40
-40
30
-50
20
-60
10
-70
25
ptfb091802fc_g2
0
30 35 40 45 50 55
Average Output Power (dBm)
Single-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 1400 mA, ƒ = 920-960 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
-20
-25
-30
-35
-40
-45
-50
-55
25
960MHz ACPU
960MHz ACPL
940MHz ACPU
940MHz ACPL
920MHz ACPU
920MHz ACPL
ptfb091802fc_g3
30 35 40 45 50 55
Average Output Power (dBm)
21
20
19
18
17
16
15
14
29
CW Performance
V_DD = 28 V, I_DQ = 1400mA
960MHz Gain
940MHz Gain
920MHz Gain
960MHz Eff
940MHz Eff
70
920MHz Eff
60
50
40
30
20
10
0 ptfb091802fc_g4
33 37 41 45 49 53 57
Output Power (dBm)
21
20
19
18
17
16
15
14
27
CW Performance
at various V_DD
I_DQ = 1400 mA, ƒ = 960 MHz
24V Gain
28V Gain
32V Gain
70
24V Eff
28V Eff
60
50
Gain
40
30
20
Efficiency
10
ptfb091802fc_g5
0
31 35 39 43 47 51 55
Output Power (dBm)
Data Sheet
3 of 9
Rev. 02.1, 2016-06-10