PTFB091802FC_16 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 – 960 MHz

PTFB091802FC
DC Characteristics
Characteristic
Conditions
Symbol Min Typ
Drain-Source Breakdown Voltage V_GS = 0 V, I_DS = 10 mA
V(_BR)DSS
65
—
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—

V_DS = 63 V, V_GS = 0 V
I_DSS
—
—
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
On-State Resistance
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.15
Operating Gate Voltage
V_DS = 28 V, I_DQ = 1400 mA
V_GS
2.5
3.9
Max
—
1
10
1
—
4.5
Unit
V
µA
µA
µA
W
V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 190 W CW)
Symbol Value
V_DSS
V_GS
T_J
T_STG
R_qJC
65
–6 to +10
200
–40 to +150
0.38
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB091802FC V1 R0
PTFB091802FC V1 R250
Order Code
PTFB091802FCV1R0XTMA1
PTFB091802FCV1R250XTMA1
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 9
Rev. 02.1, 2016-06-10