PTFB090901EFA Datasheet, PDF (4/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Typical Performance (cont.)
Single-carrier WCDMA Broadband
V_DD = 28 V, I_DQ = 620 mA, POUT = 28 W,
3GPP WCDMA signal
60
0
IRL
50
-10
40
Efficiency
30
-20
IML3
-30
20
-40
Gain
10
810
855
900
945
990
b090901 gr 6
-50
1035 1080
Frequency (MHz)
PTFB090901EA
PTFB090901FA
CW Power Sweep
V_DD = 30 V, I_DQ = 650 mA, ƒ = 960 MHz
22
21
20 ^Gain
19
18
Efficiency
17
16
15
34
38
42
46
Output Power, Avg. (dBm)
70
60
50
40
30
20
10
b090901 gr 7
0
50
Two-tone Drive-up
V_DD = 28 V, I_DQ = 650 mA,
ƒ₁ = 960 MHz, ƒ₂ = 959 MHz
-25
-35
-45
-55
33
60
50
40
3rd Order IMD
30
20
Efficiency
10
36 39 42 45 48
Output Power, PEP (dBm)
b090901 gr 8
0
51
Two-tone Drive-up
V_DD = 30 V, I_DQ = 650 mA,
ƒ₁ = 960 MHz, ƒ₂ = 959 MHz
22
60
21
50
20 ^Gain
40
19
30
Efficiency
18
20
17
10
16
33
b090901 gr 9
0
36 39 42 45 48 51
Output Power, PEP (dBm)
Data Sheet
4 of 14
Rev. 05.2, 2016-06-09