PTFB090901EFA Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFB090901EA
PTFB090901FA
Thermally-Enhanced High Power RF LDMOS FETs
90 W, 28 V, 920 – 960 MHz
Description
The PTFB090901EA and PTFB090901FA are 90-watt LDMOS
FETs intended for use in multi-standard cellular power amplifier
applications in the 920 to 960 MHz frequency band. Features in-
clude input and output matching, high gain and thermally-enhanced
packages. Manufactured with Infineon's advanced LDMOS pro-
cess, these devices provide excellent thermal performance and
superior reliability.
PTFB090901EA
Package H-36265-2
PTFB090901FA
Package H-37265-2
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 650 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
23
60
22
50
Gain
21
40
20
30
19
20
Efficiency
18
10
17
b090901 gr 1
0
31 33 35 37 39 41 43 45 47 49
Output Power, Avg. (dBm)
Features
• Input and output internal matching
• Typical CW performance, 960 MHz, 28 V
- Output power at P_1dB = 90 W
- Efficiency = 65%
• Typical two-carrier WCDMA performance,
960 MHz, 28 V
- Average output power = 20 W
- Linear Gain = 20.8 dB
- Efficiency = 35%
- Intermodulation distortion = –35 dBc
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS-compliant
• Capable of handling 10:1 VSWR @ 28 V, 90 W (CW)
output power
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 650 mA, P_OUT = 25 W average, ƒ = 960 MHz
3GPP signal, PAR = 10 dB @ 0.01% CCDF probability, channel bandwidth = 3.84 MHz
Characteristic
Symbol
Min
Gain
Drain Efficiency
G_ps
19
h_D
36
Adjacent Channel Power Ratio
ACPR
—
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Typ
Max
Unit
19.5
—
dB
40
—
%
–35
–31.5
dBc
Rev. 05.2, 2016-06-09