PTFA142401EL Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Gain vs. Output Power
V_DD = 30 V, ƒ = 1500 MHz
17.0
16.5
16.0
15.5
15.0
0
I_DQ = 1800 mA
I_DQ = 1500 mA
I_DQ = 1200 mA
I_DQ = 600 mA
I_DQ = 900 mA
40 80 120 160 200 240
Output Power (W)
PTFA142401EL
PTFA142401FL
CW Power Sweep (P–1dB)
V_DD = 30 V, I_DQ = 1.8 A, ƒ = 1500 MHz
18
17
Gain
16
60
Drain Efficiency
50
40
15
14
13
0
30
T_CASE = 25°C
T_CASE = 90°C
20
10
40 80 120 160 200 240 280
Output Power (W)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
2.33 A
1.03
4.65 A
1.03
6.99 A
1.02
1.02
9.33 A
1.01
11.64 A
1.01
13.98 A
1.00
16.32 A
1.00
18.66 A
0.99
21.00 A
0.99
0.98
0.98
-20
0
20
40
60 80 100
Case Temperature (°C)
Data Sheet
4 of 10
Rev. 04, 2009-07-16