PTFA142401EL Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz

Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 2.0 A, P_OUT = 240 W PEP, ƒ = 1500 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min
G_ps
15.0
η_D
40
IMD
—
PTFA142401EL
PTFA142401FL
Typ
Max
Unit
16.0
—
dB
43
—
%
–31
–29
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 30 V, I_DQ = 2.0 A
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 240 W CW)
Ordering Information
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.05
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
625
3.57
–40 to +150
0.28
Unit
V
V
°C
W
W/°C
°C
°C/W
Type and Version
PTFA142401EL V4
PTFA142401FL V4
Package Outline
H-33288-2
H-34288-2
Package Description
Thermally-enhanced, slotted flange,
single-ended
Thermally-enhanced, earless flange,
single-ended
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Shipping
Tray
Tray
Marking
PTFA142401EL
PTFA142401FL
Rev. 04, 2009-07-16