PTFA142401EL Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz

Confidential, Limited Internal Distribution
Typical Performance (data taken in an Infineon test fixture)
PTFA142401EL
PTFA142401FL
Two-tone Drive-up
V_DD = 30 V, I_DQ = 2000 m A,
ƒ = 1475 MHz, tone spacing = 1 MHz
-25
-30
-35
-40
-45
-50
-55
-60
-65
45
45
Efficiency
40
35
IM3
IM5
30
25
IM7 ₂₀
15
10
5
47
49
51
53
55
Output Power, PEP (dBm)
Power Sweep, CW Conditions
V_DD = 30 V, I_DQ = 2000 mA, ƒ = 1475 MHz
17
60
16
Gain
15
14
50
40
Efficiency
30
13
20
12
10
0 40 80 120 160 200 240 280
Output Power (W)
Broadband Performance
V_DD = 30 V, I_DQ = 2000 mA, P_OUT = 50 W
40
0
35
Return Loss
-5
30
-10
25
-15
20
Efficiency
-20
15
10
1400
Gain
1430 1460 1490 1520
Frequency (MHz)
-25
-30
1550
Pulsed CW Characteristics
V_DD = 30 V, I_DQ = 1800 mA, ƒ = 1475 MHz
10 µs pulse time, 10% duty cycle
59
57
Ideal P_OUT
55
53
51
Measured P_OUT
49
47
30 32 34 36 38 40 42
Input Power (dBm)
Data Sheet
3 of 10
Rev. 04, 2009-07-16