PTFA091201GL_09 Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
EDGE Performance
V_DD = 28 V, I_DQ = 750 mA, ƒ = 959.8 MHz
9 ^{TCASE = –25°C}
8 ^{TCASE = 25°C}
7 ^{TCASE = 90°C}
Efficiency
6
5
4
3
2
1
EVM
0
36 38 40 42 44 46 48
Output Power, Avg. (dBm)
55
50
45
40
35
30
25
20
15
10
50
PTFA091201GL
PTFA091201HL
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 750 mA, ƒ = 960 MHz
20
19
18
17
16
15
14
40
Gain
Efficiency
42 44 46 48 50
Output Power (dBm)
70
60
50
40
30
20
10
52
Output Power (P–1dB) vs. Supply Voltage
I_DQ = 750 mA, ƒ = 960 MHz
52.5
52.0
51.5
51.0
50.5
50.0
49.5
24
26
28
30
Supply Voltage (V)
IS-95 CDMA Performance
V_DD = 28 V, I_DQ = 750 mA, ƒ = 960 MHz
40
35
30
25
20
15
10
5
32
-10
Efficiency
-20
-30
-40
Adj 750 kHz
-50
-60
Alt1 1.98 MHz ^-70
-80
34 36 38 40 42 44 46
Output Power (dBm), Avg.
Data Sheet
4 of 10
Rev. 03, 2009-03-31