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PTFA091201GL_09 Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz | |||
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Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Twoâtone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT = 110 W PEP, Æ = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min
Gain
Gps
18.0
Drain Efficiency
ηD
45
Intermodulation Distortion
IMD
â
PTFA091201GL
PTFA091201HL
Typ
Max
Unit
18.5
â
dB
48
â
%
â28
â26
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 750 mA
VGS = 10 V, VDS = 0 V
Maximum Ratings
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
â
â
â
2.0
â
Typ
â
â
â
0.07
2.5
â
Max
â
1.0
10.0
â
3.0
1.0
Unit
V
µA
µA
â¦
V
µA
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 120 W CW, soldered)
Ordering Information
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
â0.5 to +12
200
625
3.57
â40 to +150
0.28
Unit
V
V
°C
W
W/°C
°C
°C/W
Type and Version
Package
PTFA091201GL V1 PG-63248-2
PTFA091201HL V1 PG-64248-2
Package Description
Thermally-enhanced slotted flange,
single-ended
Thermally-enhanced earless flange,
single-ended
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Shipping
Tray
Tray
Marking
PTFA091201GL
PTFA091201HL
Rev. 03, 2009-03-31
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