PTFA091201GL_09 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz

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Typical Performance (data taken in a production test fixture)
PTFA091201GL
PTFA091201HL
Broadband Performance
V_DD = 28 V, I_DQ = 750 mA, P_OUT = 120 W
20
65
19
Gain
18
17
16
900 910
Efficiency
60
55
-10
Return Loss -5105
-20
-4255
920 930 940 950 960
Frequency (MHz)
Intermodulation Distortion vs. Output Power
V_DD = 28 V, I_DQ = .750 mA, ƒ₁ = 959 MHz, ƒ₂ = 960 MHz
-10
-20
-30
3rd Order
-40
5th
-50
-60
7th
-70
36 37 38 39 40 41 42 43 44 45 46 47 48 49
Output Power, Avg (dBm)
IM3 vs. Output Power at Selected Biases
V_DD = 28 V, ƒ₁ = 959 MHz, ƒ₂ = 960 MHz
series show Idq
-20
-25
-30
525 mA
-35
-40
750 mA
-45
-50
-55
940 mA
-60
-65
37 39 41 43 45 47 49
Output Power, Avg (dBm)
Gain vs. Output Power
V_DD = 28 V, ƒ = 960 MHz
20.0
19.5
I_DQ = 1125 mA
19.0 _{IDQ = 750 mA}
18.5
18.0
17.5
I_DQ = 375 mA
17.0
16.5
16.0
38 40 42 44 46 48 50 52 54
Output Power (dBm)
Data Sheet
3 of 10
Rev. 03, 2009-03-31