PTFA070601E Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
V_DD = 28 V, I_DQ = 600 m A,
ƒ = 760 MHz, tone spacing = 1 MHz
-15
Efficiency
50
-25
IM3
40
-35
-45
IM5
-55
30
20
IM7
-65
10
-75
0
28 30 32 34 36 38 40 42 44 46
Output Power, Avg. (dBm)
PTFA070601E
PTFA070601F
Output Power (P–1dB) vs. Drain Voltage
I_DQ = 600 mA, ƒ = 760 MHz
49.5
49
48.5
48
47.5
47
46.5
22
24
26
28
30
32
34
Drain Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
0.8 A
2.4 A
6.0 A
12.0 A
18.0 A
24.0 A
32.0 A
0
20 40 60 80 100
Case Temperature (°C)
Data Sheet
4 of 10
Rev. 01, 2009-04-16