PTFA070601E Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz

Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
PTFA070601E
PTFA070601F
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 600 mA, ƒ = 760 MHz
T_CASE = -10°C
22
T_CASE = 25°C
75
21
Gain
T_CASE = 80°C
65
20
55
19
45
18
35
17
16
Efficiency
25
15
15
36 38 40 42 44 46 48 50
Output Power (dBm)
Broadband Performance
V_DD = 28 V, I_DQ = 600 mA, P_OUT = 45 dBm
50
45
40
35
30
25
20
15
710
Efficiency
Return Loss
720 730 740 750
Frequency (MHz)
-4
-6
-8
-10
-12
-14
-16
Gain
-18
-20
760 770
IM3 vs. Output Power at Selected Biases
V_DD = 28 V, ƒ = 760 MHz, tone spacing = 1 MHz
-20
-25
I_DQ = 700 mA
-30
-35
I_DQ = 600 mA
-40
-45
-50
-55
I_DQ = 450 mA
-60
-65
29 31 33 35 37 39 41 43 45 47
Output Power, Avg. (dBm)
Broadband Performance (at P–1dB)
V_DD = 28 V, I_DQ = 600 m A
65
60
55
50
45
40
35
30
25
20
15
710
51
Efficiency
50
49
Output Power
48
Gain
47
46
720 730 740 750 760 770
Frequency (MHz)
Data Sheet
3 of 10
Rev. 01, 2009-04-16