PTFA070601E Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz

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Thermally-Enhanced High Power RF LDMOS FETs
60 W, 725 – 770 MHz
Description
The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs
designed for cellular power amplifier applications in the 725 to 770
MHz band. Features include input matching and thermally-enhanced
packages with slotted or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA070601E
Package H-36265-2
PTFA070601F
Package H-37265-2
PTFA070601E
PTFA070601F
2-Carrier WCDMA Performance
V_DD = 28 V, I_DQ = 600 m A, ƒ = 760 MHz, 3GPP WCDMA
s ignal, P/A R = 8 dB, 10 MHz carrier spacing
-25
55
50
-30
45
-35
Efficiency
40
35
-40
IM3
30
25
-45
20
-50
15
ACPR
10
-55
5
29 31 33 35 37 39 41 43 45 47
Output Power, avg. (dBm )
Features
• Broadband internal matching
• Typical WCDMA performance, 760 MHz, 28 V
- Average output power = 12 W
- Gain = 19 dB
- Efficiency = 29%
• Typical CW performance, 760 MHz, 28 V
- Output power at P–1dB = 60 W
- Gain = 19 dB
- Efficiency = 72%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 60 W
(CW) output power
• Pb-free and RoHS-compliant
RF Characteristics
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 600 mA, P_OUT = 12 W AVG, ƒ = 760 MHz
Characteristic
Symbol Min Typ
Max
Unit
Intermodulation Distortion
IMD
—
–37
—
dBc
Gain
Drain Efficiency
G_ps
—
19
—
dB
η_D
—
29
—
%
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 01, 2009-04-16