PTFA041501GL Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Intermodulation Distortion vs. Pout
V_DD = 28 V, I_DQ = 900 mA,
ƒ₁ = 469 MHz, ƒ₂ = 470 MHz
0
50
-10
-20
-30
IM3
-40
-50
-60
45
40
Efficiency
35
30
IM5 ²⁵
20
IM7
15
-70
36
38 40 42 44 46 48
Output Power (dBm), avg.
10
50
PTFA041501GL
PTFA041501HL
IM3 vs. Output Power at Selected Biases
V_DD = 28 V , ƒ₁ = 469 MHz, ƒ₂ = 470 MHz
-25
-27
-29
675 mA
-31
-33
900 mA
-35
-37
-39
1125 mA
-41
-43
36 38 40 42 44 46 48 50
Output Power (dBm)
Output Power (at 1 dB Compression)
vs. Supply Voltage
I_DQ = 900 mA, ƒ = 470 MHz
55
54
53
52
51
50
24
26
28
30
32
Supply Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.29 A
0.88 A
1.47 A
2.20 A
4.41 A
6.61 A
8.81 A
11.02 A
0
20
40 60 80 100
Case Temperature (°C)
Data Sheet
4 of 11
Rev. 02, 2008-11-21