|
PTFA041501GL Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz | |||
|
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 420 â 500 MHz
PTFA041501GL
PTFA041501HL
Description
The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs
designed for ultra-linear CDMA power amplifier applications. They
are available in thermally-enhanced plastic open-cavity packages
with copper flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA041501GL
Package PG-63248-2
PTFA041501HL
Package PG-64248-2
Single-carrier CDMA IS-95 Performance
VDD = 28 V, IDQ = 900 mA, Æ = 470 MHz
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
36
â15°C
25°C
90°C
Efficiency
ACPR
ALT
38 40 42 44 46
Average Output Power (dBm)
45
40
35
30
25
20
15
10
5
0
48
Features
⢠Thermally-enhanced plastic open-cavity (EPOCâ¢)
packages with copper flanges, Pb-free and RoHS
compliant
⢠Broadband internal matching
⢠Typical CDMA performance at 470 MHz, 28 V
- Average output power = 60 W
- Linear Gain = 21 dB
- Efficiency = 41%
⢠Typical CW performance, 470 MHz, 28 V
- Output power at Pâ1dB = 175 W
- Efficiency = 62%
⢠Integrated ESD protection: Human Body Model,
Class 1 (minimum)
⢠Excellent thermal stability
⢠Low HCI drift
⢠Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
RF Characteristics
Single-carrier CDMA IS-95 Measurements (not subject to production testâverified by design/characterization in
Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 60 W average, Æ = 470 MHz
Characteristic
Symbol Min Typ
Max
Unit
Gain
Gps
â
21
â
dB
Drain Efficiency
ηD
â
41
â
%
Adjacent Channel Power Ratio
ACPR
â
â33
â
dB
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive deviceâobserve handling precautions!
Data Sheet
1 of 11
Rev. 02, 2008-11-21
|
▷ |