PTFA041501GL Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz

Confidential, Limited Internal Distribution
Typical Performance (data taken in a production )
Broadband Circuit Performance
V_DD = 28 V, I_DQ = 900 mA, P1dB
50
-13
45
-14
Efficiency
40
-15
35
-16
Return Loss
30
-17
25
Gain
-18
20
-19
15
460
462
464
466
468
Frequency (MHz)
-20
470
PTFA041501GL
PTFA041501HL
P_OUT, Gain & Efficiency (at P-1dB) vs. Frequency
V_DD = 28 V, I_DQ = 900 mA, P–1dB
65
20.9
60
Efficiency
20.8
55
20.7
50
20.6
P–1dB
45
20.5
40
20.4
35
20.3
30
20.2
25 ^Gain
20.1
20
20
15
19.9
460 462 464 466 468 470
Frequency (MHz)
Power Sweep at selected I_DQ
V_DD = 28 V, ƒ = 470 MHz
22.0
21.5
21.0
20.5
I_DQ = 1125 mA
20.0
19.5
19.0
I_DQ = 900 mA
18.5
18.0
I_DQ = 675 mA
17.5
17.0
39 41 43 45 47 49 51 53 55
Output Power (dBm)
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 900 mA, ƒ = 470 MHz
22
80
21
70
20
60
Gain
19
50
18
40
Efficiency
17
30
16
T_CASE = 25°C
T_CASE = 90°C
20
15
10
39 41 43 45 47 49 51 53 55
Output Power (dBm)
Data Sheet
3 of 11
Rev. 02, 2008-11-21