PTF211301 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz

PTF211301
Typical Performance (cont.)
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 28 V, I_DQ = 1.50 A, , P_OUT = 50.8 dBm PEP,
f = 2140 MHz
-20
-30
3rd Order
-40
5th Order
-50
-60
0
7th Order
5 10 15 20 25 30 35
Tone Spacing (MHz)
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
2.25 A
1.02
4.50 A
1.01
6.75 A
9.00 A
1.00
11.25 A
13.50 A
0.99
0.98
0.97
0.96
-20
20
60
100
Case Temperature (°C)
Broadband Circuit Impedance
Z Source
D
Z Load
Frequency
MHz
2050
2110
2140
2170
2220
G
S
Z Source Ω
R
jX
6.58
-7.02
6.14
-6.76
5.96
-6.75
5.82
-6.54
5.45
-6.36
Z Load Ω
R
jX
1.43
0.19
1.27
0.66
1.19
0.80
1.25
1.09
1.12
1.49
Z₀ = 50 Ω
Z Load
2220 MHz
2050 MHz
Z Source
0.1
2220 MHz
2050 MHz
Data Sheet
4
2004-01-02