PTF211301 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz

Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
V_DD = 28V, f = 2140 MHz, tone spacing = 1 MHz
-30
-35
1.65 A 1.80 A
-40
-45
-50 1.20 A
-55
-60
1.35 A 1.50 A
-65
38 40 42 44 46 48 50 52
Peak Output Power (dBm)
PTF211301
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 1.50 A, f = 2170 MHz
15
55
14
Gain
45
13
35
12
Ef f iciency
25
11
15
10
37
5
42
47
52
Output Power (dBm)
Single–Carrier WCDMA Drive–Up
V_DD = 28 V, I_DQ = 1.50 A, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8.5 dB, 3.84 MHz bandwidth
-40
25
Ef f iciency
-42
20
-44
15
-46
10
-48
-50
34
5
ACPR Low ACPR Up
0
36
38
40
42
44
Average Output Power (dBm)
IM3, Gain & Drain Efficiency
vs Supply Voltage
I_DQ = 1.50 A, f = 2140 MHz, P_OUT = 47.8 dBm PEP,
tone spacing = 1 MHz
0
45
-5
40
-10
Ef f iciency
35
-15
30
-20
25
-25
20
Gain
-30
15
-35
10
-40
IM3 Up
5
-45
0
23 24 25 26 27 28 29 30 31 32 33
Supply Voltage (V)
Data Sheet
3
2004-01-02