PTF211301 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz

PTF211301
DC Characteristics at T_CASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 1.5 A
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 130 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Typical Performance (data taken in a production test fixture)
Min Typ
65
—
—
—
—
0.07
2.5
3.2
—
—
Max
—
1.0
—
4.0
1.0
Value
65
–0.5 to +12
200
350
2.0
–40 to +150
0.50
Units
V
µA
Ω
V
µA
Unit
V
V
°C
W
W/°C
°C
°C/W
Broadband Performance
V_DD = 28 V, I_DQ = 1.50 A, P_OUT = 44 dBm
45
-5
40
-10
Input Return Loss
35
-15
30
-20
25 _Efficiency
-25
20
-30
15 ^Gain
-35
10
2060
2110
2160
-40
2210
Frequency (MHz)
Intermodulation Distortion Products &
Efficiency vs. Output Power
V_DD = 28V, I_DQ = 1.50 A, f = 2140 MHz,
tone spacing = 1 MHz
-30
40
-35
Ef f iciency
35
-40
30
-45 _IM3
25
-50
20
-55
15
-60 ^IM5
10
-65
5
IM7
-70
0
38 40 42 44 46 48 50 52
Output Power, PEP (dBm)
Data Sheet
2
2004-01-02