PTAC210802FC Datasheet, PDF (4/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAC210802FC
Typical Performance (cont.)
Single-carrier WCDMA
Broadband Performance
V_DD = 28 V, I_DQ = 100 mA, V_GS1 = 1.3 V,
P_OUT = 9 W, 3GPP WCDMA signal,
PAR = 10 dB, BW 3.84 MHz
60
0
RL
50
-10
40
Efficiency
-20
30
IMD
-30
20
Gain
-40
10
-50
OPAR
0
-60
c210802fc-g5
2010 2050 2090 2130 2170 2210 2250
Frequency (MHz)
Power Sweep, CW
V_DD = 28 V, I_DQ = 100 mA, V_GS1 = 1.3 V
20
60
19
55
18 _Gain
50
17
45
16
40
15
35
14
Efficiency
13
2110 MHz
2140 MHz
2170 MHz
12
32 34 36 38 40 42 44 46
Output Power (dBm)
30
25
c210802fc-g6
20
48 50
Load Pull Performance
Z Source
G1
G2
Z Load
D1
S
D2
Main Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; V_DD = 28 V, 100 mA
P_1dB
Max Output Power
Max PAE
Freq
Zs
[MHz]
[
Zl
Gain
P_OUT
P_OUT
PAE
Zl
Gain
P_OUT
P_OUT
PAE
[
[dB]
[dBm]
[W]
[%]
[
[dB]
[dBm]
[W]
[%]
2110 28.4 – j28.1 15.1 – j11.9 20.8
43.40
22
50
4.6 – j5.2
23.6
41.3
13
68.1
2140 32.4 – j27.7 7.7 – j10
22.0
43.50
22
61
4.15 – j6
23.9
41.3
13
71.9
2170 45.1 – j33.3 10.8 – j10.6 21.6
43.64
23
58
5.2 – j7.2
23.4
42.1
16
68.6
Peak Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; V_DD = 28 V, V_Gs1 = 1.41 V, Doherty Class C
P_3dB
Max Output Power
Max PAE
Freq
Zs
[MHz]
[
Zl
Gain
P_OUT
P_OUT
PAE
Zl
Gain
P_OUT
P_OUT
PAE
[
[dB]
[dBm]
[W]
[%]
[
[dB]
[dBm]
[W]
[%]
2110 14.8 – j14.6 2.4 – j7.4
14.1
49.60
91
62.0
1.6 – j6.0
15.3
48.3
68
72.5
2140 20.6 – j13.6 2.7 – j7.8 14.0
49.50
89
58.8
1.8 – j6.5
15.2
48.7
74
68.5
2170 24.5 – j9.8 2.6 – j8.1
13.9
49.60
91
57.7
2.0 – j6.6
15.3
48.6
72
67.9
Data Sheet
4 of 8
Rev. 04, 2014-02-25