PTAC210802FC Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAC210802FC
Thermally-Enhanced High Power RF LDMOS FET
80 W, 28 V, 2110 – 2170 MHz
Description
The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical
design intended for use in multi-standard cellular power amplifier
applications in the 2110 to 2170 MHz frequency band. Features
include dual-path design, input matching, high gain and thermally-
enhanced package with earless flange. Manufactured with Infineon's
advanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
PTAC210802FC
Package H-37248-4
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 100 mA, V_GS1 = 1.3 V,
ƒ = 2170 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
19
BW 3.84 MHz, Doherty Fixture
55
Efficiency
18
50
17
45
16
Gain
40
15
35
14
30
13
c210802fc-gc
25
32 34 36 38 40 42 44 46 48
Output Power (dBm)
Features
• Asymmetrical design
- Main : P1dB = 19 W Typ
- Peak : P1dB = 60 W Typ
• Broadband internal matching
• Wide video bandwidth
• Typical CW pulsed performance, 2170 MHz, 28 V
(Doherty fixture)
- Output power @ P_3dB = 75 W
- Efficiency = 48%
- Gain @ P3dB = 14 dB
• Capable of handling 10:1 VSWR @28 V, 80 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
V_DD = 28 V, I_DQ = 85 mA, V_GS1 = 1.3 V, P_OUT = 5 W avg, ƒ₁ = 2165 MHz, ƒ₂ = 2175 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF, 10 MHz carrier spacing
Characteristic
Linear Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
15
17
_D
39
43
IMD
—
–31
Max
—
—
–26
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 04, 2014-05-14