PTAC210802FC Datasheet, PDF (2/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAC210802FC
DC Characteristics (each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
(main)
On-State Resistance (peak)
Operating Gate Voltage (main)
Operating Gate Voltage (peak)
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 0.1 A
V_DS = 28 V, I_DQ = 0 A
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (main, T_CASE = 70°C, 19 W CW)
Thermal Resistance (peak, T_CASE = 70°C, 60 W CW)
Ordering Information
Type and Version
PTAC210802FC V1
PTAC210802FC V1 R250
Order Code
PTAC210802FCV1XWSA1
PTAC210802FCV1R250XTMA1
Symbol
V(_BR)DSS
I_DSS
I_DSS
R_DS(on)
R_DS(on)
V_GS
V_GS
I_GSS
Min
65
—
—
—
—
—
—
—
Typ
—
—
—
0.6
0.19
2.6
1.35
—
Max
—
1
10
—
—
—
—
1
Unit
V
µA
µA


V
V
µA
Symbol
V_DSS
V_GS
V_DD
T_J
T_STG
R_JC
R_JC
Value
65
–6 to +10
0 to +32
225
–65 to +150
2.5
0.8
Unit
V
V
V
°C
°C
°C/W
°C/W
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tray
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 04, 2014-05-14