IDB18E120_13 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – 1200 V Emitter Controlled technology

1 Power dissipation
P_tot = f (T_C)
parameter: Tj ≤ 150°C
120
W
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
°C
150
T_C
3 Typ. diode forward current
I_F = f (V_F)
2 Diode forward current
I_F = f(T_C)
parameter: T_j≤ 150°C
35
A
IDB18E120
25
20
15
10
5
0
25
50
75
100
°C
150
T_C
4 Typ. diode forward voltage
V_F = f (T_j)
54
A
-55°C
42
25°C
100°C
150°C
36
30
24
18
12
6
2.6
V
36A
2.2
2
18A
1.8
1.6
9A
1.4
0
0
0.5
1
1.5
2
V
3
V_F
1.2
-60
-20
20
60
100 _°C 160
T_j
Rev.2.3
Page 4
2013-07-02