IDB18E120_13 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – 1200 V Emitter Controlled technology

Fast Switching Emitter Controlled Diode
Feature
• 1200 V Emitter Controlled technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
* RoHS compliant
IDB18E120
Product Summary
V_RRM
1200 V
I_F
V_F
T_jmax
18 A
1.65 V
150 °C
PG-TO263-3-2
2
1
3
Type
IDB18E120
Package
Ordering Code Marking Pin 1 PIN 2 PIN 3
PG-TO263-3-2
-
D18E120 NC
C
A
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continous forward current
T_C=25°C
T_C=90°C
V_RRM
I_F
Surge non repetitive forward current
I_FSM
T_C=25°C, t_p=10 ms, sine halfwave
Maximum repetitive forward current
I_FRM
T_C=25°C, t_p limited by T_jmax, D=0.5
Power dissipation
P_tot
T_C=25°C
T_C=90°C
Operating and storage temperature
Soldering temperature
reflow soldering, MSL1
T_j , T_stg
T_S
Value
1200
31
19.8
78
47
113
54
-55...+150
260
Unit
V
A
W
°C
°C
Rev.2.3
Page 1
2013-07-02