IDB18E120_13 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – 1200 V Emitter Controlled technology

IDB18E120
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Dynamic Characteristics
Reverse recovery time
V_R=800V, I_F=18A, di_F/dt=800A/µs, T_j=25°C
V_R=800V, I_F=18A, di_F/dt=800A/µs, T_j=125°C
V_R=800V, I_F=18A, di_F/dt=800A/µs, T_j=150°C
t_rr
- 195 -
- 280 -
- 300 -
Peak reverse current
V_R=800V, I_F = 18 A, di_F/dt=800A/µs, T_j=25°C
V_R=800V, I_F =18A, di_F/dt=800A/µs, T_j=125°C
V_R=800V, I_F =18A, di_F/dt=800A/µs, T_j=150°C
I_rrm
- 20.2 -
- 24.4 -
- 25.3 -
Reverse recovery charge
V_R=800V, I_F=18A, di_F/dt=800A/µs, T_j=25°C
V_R=800V, I_F =18A, di_F/dt=800A/µs, T_j=125°C
V_R=800V, I_F =18A, di_F/dt=800A/µs, T_j=150°C
Q_rr
- 1880 -
- 3200 -
- 3540 -
Reverse recovery softness factor
S
V_R=800V, I_F=18A, di_F/dt=800A/µs, T_j=25°C
V_R=800V, I_F=18A, di_F/dt=800A/µs, T_j=125°C
V_R=800V, I_F=18A, di_F/dt=800A/µs, T_j=150°C
-
5.5
-
-
6.6
-
-
6.7
-
Unit
ns
A
nC
Rev.2.3
Page 3
2013-07-02