CLY35 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – HiRel C-Band GaAs Power-MESFET

Electrical Characteristics (continued)
CLY35
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Linear power gain ¹⁾
G_lp
V_DS = 9 V, I_D = 720 mA, f = 2.3 GHz,
P_in = 0 dBm
CLY35-00
10.0 11.0 -
CLY35-05
10.5 11.2 -
CLY35-10
10.5 11.2 -
Output power at 1dB gain compr. ¹⁾
P_1dB
V_DS = 9 V, I_{D(RF off)} = 720 mA, f = 2.3 GHz
CLY35-00
34.5 34.8 -
CLY35-05
35
35.3 -
CLY35-10
35.5 35.8 -
Output power ¹⁾
P_out
V_DS = 9 V, I_{D(RF off)} = 720 mA, f = 2.3 GHz,
P_in = 25 dBm
CLY35-00
-
34.8 -
CLY35-05
-
35.3 -
CLY35-10
-
35.8 -
Power added efficiency ^{1), 2)}
PAE
V_DS = 9 V, I_{D(RF off)} = 720 mA, f = 2.3 GHz,
@ 1dB gain compression
CLY35-00
40
47
-
CLY35-05
45
50
-
CLY35-10
45
53
-
Notes.:
1) RF Power characteristics given for power matching conditions
2) Power added efficiency: PAE = (P_RFout - P_RFin) / P_DC
Unit
dB
dBm
dBm
%
Semiconductor Group
4 of 9
Draft D, September 99