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CLY35 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – HiRel C-Band GaAs Power-MESFET
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Electrical Characteristics (at TA=25°C; unless otherwise specified)
CLY35
Parameter
DC Characteristics
Drain-source saturation current
VDS = 2 V, VGS = 0 V
Gate threshold voltage
VDS = 3 V, ID = 80 mA
Drain current at pinch-off, low VDS
VDS = 3 V, VGS = -3.8 V
Gate current at pinch-off, low VDS
VDS = 3 V, VGS = -3.8 V
Drain current at pinch-off, high VDS
VDS = 12 V, VGS = -4 V
Gate current at pinch-off, high VDS
VDS = 12 V, VGS = -4 V
Transconductance
VDS = 3 V, ID = 720 mA
Thermal resistance
junction to soldering point
VDS = 9 V, ID = 720 mA, Ts = +25°C
Symbol
min.
Values
Unit
typ. max.
IDss
1.2 2.0
2.8 A
-VGth
1.6 2.6
3.6 V
IDp3
-
-
200 µA
-IGp3
-
-
80
µA
IDp12
-
-
4000 µA
-IGp12
-
-
1600 µA
gm
600 730 -
mS
Rth JS
-
6.8
-
K/W
Semiconductor Group
3 of 9
Draft D, September 99
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