CLY32 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – HiRel C-Band GaAs Power-MESFET

Electrical Characteristics (continued)
CLY32
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Linear power gain ¹⁾
G_lp
V_DS = 9 V, I_D = 380 mA, f = 2.3 GHz,
P_in = 0 dBm
CLY32-00
11.0 12.0 -
CLY32-05
11.5 12.5 -
CLY32-10
11.5 12.5 -
Output power at 1dB gain compr. ¹⁾
P_1dB
V_DS = 9 V, I_{D(RF off)} = 380 mA, f = 2.3 GHz
CLY32-00
-
31.8 -
CLY32-05
-
32.3 -
CLY32-10
-
33.0 -
Output power ¹⁾
P_out
V_DS = 9 V, I_{D(RF off)} = 380 mA, f = 2.3 GHz,
P_in = 16.5 dBm
CLY32-00
31.5 31.8 -
CLY32-05
32.0 32.3 -
CLY32-10
32.5 33.0 -
Power added efficiency ^{1), 2)}
PAE
V_DS = 9 V, I_{D(RF off)} = 380 mA, f = 2.3 GHz,
P_in = 21.5 dBm
CLY32-00
40
47
-
CLY32-05
45
50
-
CLY32-10
45
53
-
Notes.:
1) RF Power characteristics given for power matching conditions
2) Power added efficiency: PAE = (P_RFout - P_RFin) / P_DC
Unit
dB
dBm
dBm
%
Semiconductor Group
4 of 10
Draft D, September 99