BFR460L3_08 Datasheet, PDF (4/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

Collector-base capacitance C_cb= ƒ(V_CB)
f = 1MHz
0.8
pF
0.6
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8 10 V
14
VCB
Power gain G_ma, G_ms, |S₂₁|² = ƒ (f)
V_CE = 3 V, I_C = 20 mA
50
dB
40
35
30
25
Gms
20
15 _|S21|²
10
Gma
5
0
0
1
2
3
4 GHz
6
f
BFR460L3
Transition frequency f_T= ƒ(I_C)
f = 1 GHz
V_CE = parameter in V
26
GHz
22
2 to 4V
1V
20
18
16
14
12
10
8
6
4
2
0 5 10 15 20 25 30 35 mA 45
IC
Power gain G_ma, G_ms = ƒ (I_C)
V_CE = 3V
f = parameter in GHz
24
dB
0.9
20
18
16
1.8
14
2.4
12
3
10
4
8
5
6
6
4
0 5 10 15 20 25 30 mA 40
IC
4
2008-08-14