BFR460L3_08 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor*
• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• SMD leadless package
• Excellent ESD performance
typical value 1500V (HBM)
• High f_T of 22 GHz
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
* Short term description
BFR460L3
3
1
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR460L3
Marking
Pin Configuration
AB
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
T_A > 0 °C
T_A ≤ 0 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation²⁾
T_S ≤ 108°C
Junction temperature
Operation junction temperature range
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_jo
T_A
T_stg
1_{Pb-containing package may be available upon special request}
2_{TS is measured on the collector lead at the soldering point to the pcb}
Value
Unit
V
4.5
4.2
15
15
1.5
50
mA
5
200
mW
150
°C
- ... -
-
-65 ... 150
°C
-65 ... 150
1
2008-08-14