BFR460L3_08 Datasheet, PDF (3/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFR460L3
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 30 mA, V_CE = 3 V, f = 1 GHz
Collector-base capacitance
C_cb
V_CB = 3 V, f = 1 MHz, V_BE = 0 ,
emitter grounded
16 22
- GHz
- 0.28 0.45 pF
Collector emitter capacitance
V_CE = 3 V, f = 1 MHz, V_BE = 0 ,
base grounded
C_ce
- 0.14 -
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz, V_CB = 0 ,
collector grounded
C_eb
- 0.55 -
Noise figure
F
dB
I_C = 5 mA, V_CE = 3 V, Z_S = Z_Sopt ,
f = 1.8 GHz
-
1.1
-
f = 3 GHz
- 1.35 -
Power gain, maximum stable¹⁾
I_C = 20 mA, V_CE = 3 V, Z_S = Z_Sopt,
Z_L = Z_Lopt, f = 1.8 GHz
Power gain, maximum available¹⁾
I_C = 20 mA, V_CE = 3 V, Z_S = Z_Sopt,
Z_L = Z_Lopt , f = 3 GHz
Transducer gain
I_C = 20 mA, V_CE = 3 V, Z_S = Z_L = 50Ω,
f = 1,8 GHz
G_ms
- 16.0 - dB
G_ma
-
11
- dB
|S _21e|²
dB
-
14
-
f = 3 GHz
-
10
-
Third order intercept point at output²⁾
V_CE = 3 V, I_C = 20 mA, f = 1.8 GHz
1dB Compression point at output
I_C = 20 mA, V_CE = 3 V, f = 1.8 GHz
IP₃
P_-1dB
-
27
- dBm
- 11.5 -
1_{Gma = |S21 / S12| (k-(k²-1)1/2), Gms = S21 / S12}
2_{IP3 value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
2008-08-14