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BFR460L3 Datasheet, PDF (4/5 Pages) Infineon Technologies AG – NPN Silicon RF Transistor
Collector-base capacitance Ccb= (VCB)
f = 1MHz
0.8
pF
0.6
0.5
0.4
0.3
0.2
0.1
00
2
4
6
8
10 V
14
VCB
Power gain Gma, Gms, |S21|2 =  (f)
VCE = 3 V, IC = 20 mA
50
dB
40
35
30
25
Gms
20
15 |S21|²
10
Gma
5
00
1
2
3
4 GHz
6
f
BFR460L3
Transition frequency fT= (IC)
f = 1 GHz
VCE = parameter in V
26
GHz
22
2 to 4V
1V
20
18
16
14
12
10
8
6
4
20 5 10 15 20 25 30 35 mA 45
IC
Power gain Gma, Gms =  (IC)
VCE = 3V
f = parameter in GHz
24
dB
0.9
20
18
16
1.8
14
2.4
12
3
10
4
8
5
6
6
40
5 10 15 20 25 30 mA 40
IC
4
May-14-2003