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BFR460L3 Datasheet, PDF (2/5 Pages) Infineon Technologies AG – NPN Silicon RF Transistor
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BFR460L3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0,5 V, IC = 0
DC current gain
IC = 20 mA, VCE = 3 V
V(BR)CEO 4.5
5
-V
ICBO
-
-
100 nA
IEBO
-
-
1 µA
hFE
50 130 200 -
2
May-14-2003
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