BFR460L3 Datasheet, PDF (1/5 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFR460L3
NPN Silicon RF Transistor
Preliminary data

For low voltage / low current applications

Ideal for VCO modules and low noise amplifiers

Low noise figure: 1.1 dB at 1.8 GHz
1

World's smallest SMD leadless package

Excellent ESD performance (>1500V HBM)

High f_T of 22 GHz
3
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR460L3
Marking
Pin Configuration
AB
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾²⁾
T_S
108°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point³⁾
R_thJS
1_{Ptot due to Maximum Ratings}
2_{TS is measured on the collector lead at the soldering point to the pcb}
3For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Value
4.5
15
15
1.5
50
5
200
150
-65 ... 150
-65 ... 150
Value

210
Unit
V
mA
mW
°C
Unit
K/W
1
May-14-2003