BFR106_10 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFR106
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics (verified by random sampling)
Power gain, maximum available¹⁾
G_ma
I_C = 70 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
-
13
-
I_C = 70 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt,
f = 1.8 GHz
-
8.5
-
Unit
dB
Transducer gain
I_C = 70 mA, V_CE = 8 V, Z_S = Z_L = 50 Ω,
f = 900 MHz
I_C = 70 mA, V_CE = 8 V, Z_S = Z_L = 50 Ω,
f = 1.8 GHz
|S_21e|²
dB
- 10.5 -
-
5
-
Third order intercept point at output²⁾
V_CE = 8 V, I_C = 70 mA, f = 0.9 GHz ,
Z_S=Z_L=50Ω
1dB Compression point
I_C = 70 mA, V_CE = 8 V, Z_S=Z_L=50Ω,
f = 0.9 GHz
IP₃
-
31
- dBm
P_-1dB
-
22
-
1_{Gma = |S21e / S12e| (k-(k²-1)1/2)}
2_{IP3 value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
4
2010-12-03