BFR106_10 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFR106
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-emitter cutoff current
V_CE = 20 V, V_BE = 0
V_CE = 10 V, V_BE = 0
Collector-base cutoff current
V_CB = 10 V, I_E = 0
Emitter-base cutoff current
V_EB = 2 V, I_C = 0
DC current gain
I_C = 70 mA, V_CE = 8 V, pulse measured
V_(BR)CEO ¹⁵
-
-V
I_CES
I_CBO
µA
-
-
1
- 0.001 0.03
-
1
30 nA
I_EBO
-
1
30
h_FE
70 100 140 -
2
2010-12-03