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BFR106_10 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – NPN Silicon RF Transistor | |||
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NPN Silicon RF Transistor
⢠High linearity low noise RF transistor
⢠22dBm OP1dB and 31dBm OIP3
@ 900MHz,8V,70mA
⢠For UHF/VHF applications
⢠Driver for multistage amplifiers
⢠For linear broadband and antenna amplifiers
⢠Collector design supports 5 V supply voltage
⢠Pb-free (RoHS compliant) package
⢠Qualified according AEC Q101
BFR106
3
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR106
Marking
Pin Configuration
R7s
1=B
2=E
3=C
Package
SOT23
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage,
TA = 25°C
TA = -55°C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ⤠73 °C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
16
15
20
20
3
210
21
700
150
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
⤠110
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note AN077 Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
1
2010-12-03
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