BFP650E6327 Datasheet, PDF (4/6 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

BFP650
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
IS =
0.61
fA
BF =
450
-
NF =
1.025
-
VAF = ¹⁰⁰⁰
V
IKF = 0.47
A
ISE = ⁶²
fA
NE =
2
-
BR = 42
-
NR = ¹
-
VAR = ²
V
IKR = 18
mA _{ISC =} 700
fA
NC = ^1.8
-
RB = 1.036


IRB = ^4.548
mA
RBM = ^0.895


RE = 0.2
-
RC = ^1.006


CJE = ^682.5
fF
VJE = 0.8
V
MJE = ^0.3
-
TF =
1.9
ps
XTF = 10
-
VTF = ^1.5
V
ITF = ^1.25
A
PTF = 0
deg _{CJC =} 204.6
fF
VJC = ^0.6
V
MJC = 0.5
-
XCJC = ¹
-
TR =
0.2
ns
CJS = 294.9
fF
VJS = ^0.6
V
MJS = ^0.27
-
NK = -1.42
-
EG = ^1.078
eV
XTI = ³
-
FC =
0.8
TNOM ²⁹⁸
K
AF = 2
-
KF = 2.441E-11
TITF1 -0.0065 -
TITF2 1.0E-5
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
LBC = ⁵⁰
pH
CBCO
LCC = ⁵⁰
pH
RCBS
LEC = ⁴
pH
CBCC
LC C
C
LBB = 554.6
pH
LCB = 606.9
pH
B
LB B
B F P 6 5 0 _ C h ip
LB C
B
S
CBEC
E
LEB = 138.7
pH
RCCS
LC B
C
CBEC = ^327.6
fF
RCES
CBCC = ^171.4
fF
LE C
CES = ⁴⁹⁰
fF
CBS = ¹²⁰
fF
CBEI
CCEI
CCS = ¹³⁵
fF
CBEO
T = 2 5 °C
Itf = 1 2 5 0 * ( 1 - 6 .5 e -3 * (T -2 5 ) + 1 .0 e -5 * (T -2 5 )^ 2 )
LE B
CCEO
E
CBCO = ^7.5
fF
CCEO = ^112.6
fF
CBEO = 121.5
fF
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
CCEI = 5.7
fF
CBEI = 6.9


RBS = ⁷¹⁰


RCS = 710


RES = 140


Valid up to 6GHz
4
Mar-27-2003