BFP650E6327 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

BFP650
NPN Silicon Germanium RF Transistor
3
Preliminary data
4

For high power amplifiers

Ideal for low phase noise oscilators

Maxim. available Gain G_ma = 21 dB at 1.8 GHz
Noise figure F = 0.9 dB at 1.8 GHz
2

Gold metallization for high reliability

70 GHz f_T- Silicon Germanium technology
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP650
Marking
Pin Configuration
R5s
1=B 2=E 3=C 4=E -
-
Package
SOT343
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S
75°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Value
4
13
13
1.2
150
10
500
150
-65 ... 150
-65 ... 150
Value

140
Unit
V
mA
mW
°C
Unit
K/W
1
Mar-27-2003