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BFP650E6327 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor
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BFP650
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 A
Collector-base cutoff current
VCB = 5 V, IE = 0 A
Emitter-base cutoff current
VEB = 0.5 V, IC = 0 A
DC current gain
IC = 80 mA, VCE = 3 V
V(BR)CEO 4
4.5
-
ICBO
-
-
100
IEBO
-
-
10
hFE
100 180 250
Unit
V
nA
µA
-
2
Mar-27-2003
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