BDP951 Datasheet, PDF (4/4 Pages) Siemens Semiconductor Group – NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)

BDP951 ... BDP955
Collector cutoff current I_CBO = f (T_A)
V_CB = 45V
10 ⁵
nA
10 ⁴
10 ³
max
10 ²
Collector-emitter saturation voltage
I_C = f (V_CEsat), h_FE = 10
10 ⁴
mA
10 ³
100°C
25°C
-50°C
10 ²
10 ¹
typ
10 ¹
10 ⁰
10 ^-1
0
20 40 60 80 100 120 °C 150
T_A
Base-emitter saturation voltage
I_C = f (V_BEsat), h_FE = 10
10 ⁴
mA
10 ⁰
0.0
0.2
0.4
V
0.8
V_CEsat
Collector current I_C = f (V_BE)
V_CE = 2V
10 ⁴
mA
10 ³
10 ³
-50°C
25°C
100°C
-50°C
25°C
10 ²
10 ²
100°C
10 ¹
10 ¹
10 ⁰
0.0 0.2 0.4 0.6 0.8 1.0 V 1.3
V_BEsat
10 ⁰
0.0 0.2 0.4 0.6 0.8 1.0 V 1.3
V_BE
4
Aug-06-2001