BDP951 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)

NPN Silicon AF Power Transistor

For AF driver and output stages

High collector current

High current gain

Low collector-emitter saturation voltage

Complementary types: BDP952 ... BDP956 (PNP)
BDP951 ... BDP955
4
3
2
1
VPS05163
Type
BDP951
BDP953
BDP955
Marking
BDP 951
BDP 953
PDP 955
1=B
1=B
1=B
Pin Configuration
2=C 3=E 4=C
2=C 3=E 4=C
2=C 3=E 4=C
Package
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Symbol BDP 951 BDP 953 BDP 955 Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, T_S = 99 °C
Junction temperature
Storage temperature
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
80
100
120 V
100
120
140
5
5
5
3
A
5
200
mA
500
3
W
150
°C
-65 ... 150
Thermal Resistance
Junction - soldering point¹⁾
R_thJS

17
K/W
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Aug-06-2001